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STF13N60M2 Discrete Semiconductor MOSFET N-CH 600V 11A TO-220FP

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HENKOSINO TECHNOLOGY CO.,LTD

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STF13N60M2 Discrete Semiconductor MOSFET N-CH 600V 11A TO-220FP

Model Number : STF13N60M2

Payment Terms : D/A, T/T, Western Union

Delivery Time : 1-2 work days

Packaging Details : Tape & Reel (TR)

Drain to Source Voltage (Vdss) : 600V

Power Dissipation (Max) : 25W (Tc)

Package / Case : TO-220-3 Full Pack

Mounting Type : Through Hole

Packaging : Tube

Supplier Device Package : TO-220FP

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We can supply STF13N60M2, send us a request quote to request STF13N60M2pirce and lead time, https://www.henkochips.com a professional electronic components distributor. With 10+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number STF13N60M2.The price and lead time for STF13N60M2depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part STF13N60M2.We look forward to working with you to establish long-term relations of cooperation

Vgs(th) (Max) @ Id:	4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):	10V
Lead Free Status / RoHS Status:	Lead free / RoHS Compliant
Detailed Description:	N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-220FP
Moisture Sensitivity Level (MSL):	1 (Unlimited)
FET Type:	N-Channel
Series:	MDmesh™ II Plus
Current - Continuous Drain (Id) @ 25°C:	11A (Tc)
Other Names:	497-13832-5
Input Capacitance (Ciss) (Max) @ Vds:	580pF @ 100V
Vgs (Max):	±25V
Rds On (Max) @ Id, Vgs:	380 mOhm @ 5.5A, 10V
Technology:	MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 10V
Operating Temperature:	-55°C ~ 150°C (TJ)

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A: After receiving the information, we will contact you by email as soon as possible.
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A: We accept T/T(Bank wire), PayPal,Western Union.

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